The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SJ535
Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance RDS (on) = 0.028 Ω typ.
• Low drive current. • 4 V gate drive devices. • High speed switching.
Outline
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
G
123
REJ03G0885-0400 (Previous: ADE-208-627B)
Rev.4.00 Sep 07, 2005
D 1. Gate 2. Drain 3. Source
S
Rev.4.00 Sep 07, 2005 page 1 of 7
2SJ535
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C 3.
2SJ535 Datasheet
