* Low on-resistance N-channel: RDS(on) ≤ 0.17 , VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.2 , VGS =
* 10 V, I D =
* 4 A
* Capable of 4 V gate drive
* Low drive current
* High speed switching
* High density mounting
* Suitable for H-bri
6AM12
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Silicon n-channel/p-channel complementary power mos fet array.
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. Th.
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