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3.7A, 20V N 　N 　N-Channel Enhancement Mode Field Effect Transistor SMD 　　Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design fo

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CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS,

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MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Volta

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RM3401 P-Channel Enhancement Mode Power MOSFET Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge

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HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

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A09T http://www.osen.net.cn 30V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Improved dv/dt c

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HY4008W/A N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le

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Preliminary www.DataSheet4U.com TSM4886 30V N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 10 @ VGS = 10V 13.5 @ VGS = 4.5V SOP-8 Pin De

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2SK1618(L), 2SK1618(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo

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AP10N70R/P-A Pb Free Plating Product Advanced Power Electronics Corp. ▼ 100% Avalanche Rated Test ▼ Fast Switching Performance ▼ Simple Drive Require

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FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET FQP4N90C / FQPF4N90C N-Channel QFET® MOSFET 900 V, 4.0 A, 4.2 Ω December 2013 Description This N-Chan

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TL072, TL072A, TL072B Low noise JFET dual operational amplifiers Datasheet - production data D SO8 Pin connections (top view) 1 2 - 3 + 4 8

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APM9935 Dual P-Channel Enhancement Mode MOSFET Features • • www.DataSheet4U.com Pin Description 5 / 5 / & % $ # , , , , -20V/-6A, RDS(ON)

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TL071, TL071A, TL071B, TL071H TL072, TL072A, TL072B, TL072H, TL072M TL074, TL074A, TL074B, TL074H, TL074M SLOS080V – SEPTEMBER 1978 – REVISED APRIL 20

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UNISONIC TECHNOLOGIES CO., LTD TL072 LOW NOISE DUAL J-FET OPERATIONAL AMPLIFIER LINEAR INTEGRATED CIRCUIT  DESCRIPTION The UTC TL072 is a high spe

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SSF3338 www.DataSheet4U.com DESCRIPTION The SSF3338 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is

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AP10N70R/P-A Pb Free Plating Product Advanced Power Electronics Corp. ▼ 100% Avalanche Rated Test ▼ Fast Switching Performance ▼ Simple Drive Require

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