Part number:
H5N2005DL
Manufacturer:
File Size:
78.48 KB
Description:
Mosfet.
H5N2005DL, H5N2005DS 200V - 6A - MOS FET High Speed Power Switching Preliminary Datasheet R07DS0796EJ0400 (Previous: REJ03G1104-0300) Rev.4.00 Jun 07.
* Low on-resistance RDS(on) = 0.52 typ. (at ID = 3 A, VGS = 10 V, Ta = 25C)
* Low drive power
* High speed switching Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S) ) D 4 123 123 G S 1. Gate 2.
H5N2005DL Datasheet (78.48 KB)
H5N2005DL
78.48 KB
Mosfet.
H5N2005DL, H5N2005DS 200V - 6A - MOS FET High Speed Power Switching Preliminary Datasheet R07DS0796EJ0400 (Previous: REJ03G1104-0300) Rev.4.00 Jun 07.
📁 Related Datasheet
H5N2005DL Silicon N Channel MOS FET High Speed Power Switching (Hitachi Semiconductor)
H5N2005DS MOSFET (Renesas)
H5N2005DS Silicon N Channel MOS FET High Speed Power Switching (Hitachi Semiconductor)
H5N2001LD Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H5N2001LM Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H5N2001LS Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H5N2003P Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H5N2004DL Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H5N2004DS Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H5N2007FN Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)