HAF1008 Datasheet | Renesas

HAF1008(L), HAF1008(S) Silicon P Channel MOS FET Series Power Switching REJ03G0027-0100Z Rev.1.00 May.13.2003 Description This FET has the over temperature shut- down capability sensing to the junction temperature. This FET has the built- in over temperature shut- down circuit in the gate area. And this circuit operation to shut- down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features - Logic level operation (-4 to -6 V Gate drive) - High endurance capability against to the short circuit - Built- in the over temperature shut- down circuit - Latch type shut- down operation (Need 0 voltage recovery) Outline LDPAK G Gate...