Part HAF1008
Description P-Channel MOSFET
Category MOSFET
Manufacturer Renesas
Size 110.85 KB
Renesas
HAF1008

Overview

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area.

  • Logic level operation (-4 to -6 V Gate drive)
  • High endurance capability against to the short circuit
  • Built-in the over temperature shut-down circuit
  • Latch type shut-down operation (Need 0 voltage recovery) Outline LDPAK
  • G Gate resistor Temperature Sencing Circuit Latch Circuit Gate Shutdown Circuit S 1 2 3 1 2 3
  • Drain (Flange)
  • Source Rev.1.00, May.13.2003, page 1 of 11