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NP82N04NDG - N-CHANNEL POWER MOS FET

Download the NP82N04NDG datasheet PDF. This datasheet also covers the NP82N04MDG variant, as both devices belong to the same n-channel power mos fet family and are provided as variant models within a single manufacturer datasheet.

General Description

The NP82N04MDG and NP82N04NDG are N-channel MOS Field Effect Transistors designed for high current switching applications.

Key Features

  • Logic level.
  • Super low on-state resistance RDS(on)1 = 4.2 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 41 A).
  • High current rating ID(DC) = ±82 A.
  • Low input capacitance Ciss = 6000 pF TYP.
  • Designed for automotive.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NP82N04MDG-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NP82N04NDG
Manufacturer Renesas
File Size 344.64 KB
Description N-CHANNEL POWER MOS FET
Datasheet download datasheet NP82N04NDG Datasheet

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Other Datasheets by Renesas

Part Number Description
NP82N04NLG N-Channel MOSFET
NP82N04MDG N-CHANNEL POWER MOS FET
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NP82N04PDG N-CHANNEL POWER MOS FET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N04MDG, NP82N04NDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP82N04MDG and NP82N04NDG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP82N04MDG-S18-AY Note NP82N04NDG-S18-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 50 p/tube Note Pb-free (This product does not contain Pb in the external electrode.) PACKAGE TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g FEATURES • Logic level • Super low on-state resistance RDS(on)1 = 4.2 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • High current rating ID(DC) = ±82 A • Low input capacitance Ciss = 6000 pF TYP.