TP65H100G4LSGB
Description
The TP65H100G4LSGB 650V, 92mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.
Key Features
- Gen IV technology
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Very low QRR
- Reduced crossover loss
- RoHS pliant and Halogen-free packaging
- Pin-to-pin drop in with e-mode (higher Vt)
- Easy to drive with monly-used gate drivers
- GSD pin layout improves high speed design
Applications
- Consumer
