TP65H100G4LSGB Datasheet - Renesas

650V SuperGaN GaN FET

TP65H100G4LSGB Features

* Gen IV technology

* JEDEC-qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Wide gate safety margin

* Transient over-voltage capability

* Very low QRR

* Reduced crossover loss

* RoHS compliant and Halogen-free

TP65H100G4LSGB General Description

The TP65H100G4LSGB 650V, 92mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and.

TP65H100G4LSGB Datasheet (848.69 KB)