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TP65H100G4LSGB - 650V SuperGaN GaN FET

Renesas

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Datasheet Details

Part number	TP65H100G4LSGB
Manufacturer	Renesas ↗
File Size	848.69 KB
Description	650V SuperGaN GaN FET
Datasheet	TP65H100G4LSGB-Renesas.pdf

TP65H100G4LSGB Product details

Description

The TP65H100G4LSGB 650V, 92mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.

Features

Gen IV technology.
JEDEC-qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Wide gate safety margin.
Transient over-voltage capability.
Very low QRR.
Reduced crossover loss.
RoHS compliant and Halogen-free packaging.
Pin-to-pin drop in with e-mode (higher Vt) Benefits.
Achieves increased efficiency in both hard- and soft-switched circuits.
Increased power density.
Reduced sys.

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Published: Jan 30, 2025 |