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TP65H100G4LSGB - 650V SuperGaN GaN FET

Description

The TP65H100G4LSGB 650V, 92mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.

It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.

Features

  • Gen IV technology.
  • JEDEC-qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Robust design, defined by.
  • Wide gate safety margin.
  • Transient over-voltage capability.
  • Very low QRR.
  • Reduced crossover loss.
  • RoHS compliant and Halogen-free packaging.
  • Pin-to-pin drop in with e-mode (higher Vt) Benefits.
  • Achieves increased efficiency in both hard- and soft-switched circuits.
  • Increased power density.
  • Reduced sys.

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Specifications in this document are tentative and subject to change Datasheet TP65H100G4LSGB 650V SuperGaN® GaN FET in PQFN (source tab) Description The TP65H100G4LSGB 650V, 92mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
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