TP65H150G4PS - 650V GaN FET

Renesas

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Datasheet Details

Part number	TP65H150G4PS
Manufacturer	Renesas
File Size	923.41 KB
Description	650V GaN FET
Datasheet	TP65H150G4PS-Renesas.pdf

TP65H150G4PS Product details

Description

Preliminary Datasheet The TP65H150G4PS 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device.It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies offering superior reliability and performance.The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.R

Features

Gen IV technology.
JEDEC-qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Wide gate safety margin.
Transient over-voltage capability.
Very low QRR.
Reduced crossover loss.
RoHS compliant and Halogen-free packaging Benefits.
Achieves increased efficiency in both hard- and soft-switched circuits.
Recommended External Circuitry for GaN FETs.
Low cost driver solution.
Inc.

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Published: Jan 8, 2025 |