TP65H150G4PS Datasheet - Renesas

650V GaN FET

TP65H150G4PS Features

* Gen IV technology

* JEDEC-qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Wide gate safety margin

* Transient over-voltage capability

* Very low QRR

* Reduced crossover loss

* RoHS compliant and Halogen-free

TP65H150G4PS General Description

Preliminary Datasheet The TP65H150G4PS 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies *offering superior reliability and performance. The Gen IV SuperGaN® platform uses advan.

TP65H150G4PS Datasheet (923.41 KB)