TP65H150G4PS fet equivalent, 650v gan fet.
* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
— Wide gate safety margin — Transi.
TP65H150G4PS 3 lead TO-220
Source
* Consumer
TP65H150G4PS TO-220
(top view) S
* Power adapters
* Low po.
Preliminary Datasheet
The TP65H150G4PS 650V, 150mΩ Gallium Nitride
(GaN) FET is a normally-off device. It combines
state-of-the-art high voltage GaN HEMT and low
voltage silicon MOSFET technologies—offering
superior reliability and performance..
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