TP65H100G4PS Datasheet, FET, Renesas

Download (Size : 744.46KB)

TP65H100G4PS Features and benefits

* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by — Wide gate safety margin — Transi.

TP65H100G4PS Application

* Consumer
* Power adapters
* Low power SMPS
* Lighting G SD Cascode Schematic Symbol Cascode Device St.

TP65H100G4PS Description

The TP65H100G4PS650V, 92mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The G.

Image gallery