mos field effect transistor.
* Low on-state resistance N-channel RDS(on)1 = 12.5 mΩ MAX. (VGS = 10 V, ID = 5 A) RDS(on)2 = 21 mΩ MAX. (VGS = 4.5 V, ID = 5 A) P-channel RDS(on)1 = 18 mΩ MAX. (VGS .
The μ PA2792AGR is N- and P-channel MOS Field Effect
Transistors designed for Motor Drive application.
FEATURES
* Low on-state resistance N-channel RDS(on)1 = 12.5 mΩ MAX. (VGS = 10 V, ID = 5 A) RDS(on)2 = 21 mΩ MAX. (VGS = 4.5 V, ID = 5 A) P-cha.
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