Datasheet Summary
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HAF2012(L), HAF2012(S)
Silicon N Channel MOS FET Series Power Switching
REJ03G1139-0400 Rev.4.00 Jul 13, 2007
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
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- - Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery)
Outline
RENE...