HAF2012L
Overview
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area.
- Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery) Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 4
- Drain
- Source
- Drain 2 3 1 1 2 3
- G Gate Resistor Temperature Sensing Circuit Latch Circuit Gate Shutdown Circuit S
