HAF2012L
HAF2012L is Silicon N Channel MOS FET Series Power Switching manufactured by Renesas.
- Part of the HAF2012 comparator family.
- Part of the HAF2012 comparator family.
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
- -
- - Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery)
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
4 1. Gate 2. Drain 3. Source 4. Drain 2 3
1 2 3
Gate Resistor
Temperature Sensing Circuit
Latch Circuit
Gate Shutdown Circuit
REJ03G1139-0400 Rev.4.00 Jul 13, 2007 Page 1 of 9
HAF2012(L), HAF2012(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Ta = 25°C Symbol VDSS VGSS VGSS ID ID (pulse) Note 1 IDR Pch Note 2 Tch Tstg Value 60 16
- 2.8 20 40 20 50 150
- 55 to +150 Unit V V V A A A W °C °C
Typical Operation Characteristics
(Ta = 25°C)
Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Symbol VIH VIL IIH1 IIH2 IIL IIH (sd) 1 IIH (sd) 2 Tsd VOP Min 3.5
- -
- -
- -
- 3.5 Typ
- -
- -
- 0.8 0.35 175
- Max
- 1.2 100 50 1
- -
- 13 Unit V V µA µA µA m A m A °C V Test...
