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HAF2012L Datasheet Silicon N Channel Mos Fet Series Power Switching

Manufacturer: Renesas

Overview: www.DataSheet4U.com HAF2012(L), HAF2012(S) Silicon N Channel MOS FET Series Power Switching REJ03G1139-0400 Rev.4.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.

Key Features

  • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery) Outline.

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