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Renesas Electronics Components Datasheet

RJH60F5DPK Datasheet

Silicon N Channel IGBT

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RJH60F5DPK
Silicon N Channel IGBT
High Speed Power Switching
Features
High speed switching
Low on-state voltage
Fast recovery diode
Outline
Preliminary
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REJ03G1836-0100
Rev.1.00
Oct 13, 2009
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
C
12 3
1. Gate
2. Collector
G 3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 μs, duty cycle 1%
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
iDF(peak) Note2
PC
θj-c
θj-c
Tj
Tstg
Ratings
600
±30
80
40
160
100
260.4
0.48
2.0
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
REJ03G1836-0100 Rev.1.00 Oct 13, 2009
Page 1 of 6


Renesas Electronics Components Datasheet

RJH60F5DPK Datasheet

Silicon N Channel IGBT

No Preview Available !

RJH60F5DPK
Preliminary
Electrical Characteristics
www.DataSheet4U.com
(Tj = 25°C)
Item
Symbol Min Typ Max Unit Test Conditions
Zero gate voltage collector current
ICES ⎯ ⎯ 100 μA VCE = 600V, VGE = 0
Gate to emitter leak current
IGES ⎯ ⎯ ±1 μA VGE = ±30 V, VCE = 0
Gate to emitter cutoff voltage
VGE(off)
4
8
Collector to emitter saturation voltage VCE(sat) 1.37 1.8
VCE(sat)
1.7
V VCE = 10V, IC = 1 mA
V IC = 40 A, VGE = 15V Note3
V IC = 80 A, VGE = 15V Note3
Input capacitance
Cies
2880
pF VCE = 25 V
Output capacitance
Reverse transfer capacitance
Coes 122 pF VGE = 0 V
Cres 47 pF f = 1 MHz
Switching time
C-E diode forward voltage
C-E diode reverse recovery time
Notes: 3. Pulse test
td(on) 40 ns IC = 30 A, Resistive Load
tr 35 ns VCC = 300 V
td(off)
tf
80
80
ns VGE = 15 V
ns Rg = 5 Ω Note3
VECF1 1.6 2.1 V IF = 20 A Note3
VECF2
1.8
V IF = 40 A Note3
trr 140 ns IF = 20 A
diF/dt = 100 A/μs
REJ03G1836-0100 Rev.1.00 Oct 13, 2009
Page 2 of 6


Part Number RJH60F5DPK
Description Silicon N Channel IGBT
Maker Renesas Technology
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