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RJH60F5DPK - Silicon N-Channel IGBT

Renesas Technology

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Datasheet Details

Part number: RJH60F5DPK
Manufacturer: Renesas ↗ Technology
File Size: 85.79 KB
Datasheet: RJH60F5DPK_RenesasTechnology.pdf
Description: Silicon N-Channel IGBT

RJH60F5DPK Product details

Features

Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode in one package.
Trench gate and thin wafer technology.
High speed switching tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) Outline.

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Silicon N-Channel IGBT Renesas Technology

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