RJH60F5DPK
Key Features
- Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode in one package
- Trench gate and thin wafer technology
- Collector (Flange) E
- Part: RJH60F5DPK
- Description: Silicon N-Channel IGBT
- Manufacturer: Renesas
- Size: 85.79 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| RJH60F5DPQ-A0 | Renesas | High Speed Power Switching |
| RJH60F5BDPQ-A0 | Renesas | IGBT |
| RJH60F3DPK | Renesas | High Speed Power Switching |
| RJH60F7DPQ-A0 | Renesas | High Speed Power Switching |
| RJH60F7BDPQ-A0 | Renesas | IGBT |
| RJH60F0DPQ-A0 | Renesas | High Speed Power Switching |
| RJH60F4DPQ-A0 | Renesas | High Speed Power Switching |
| RJH60F6DPQ-A0 | Renesas | High Speed Power Switching |
| RJH60F3DPQ-A0 | Renesas | High Speed Power Switching |
| RJH60F6BDPQ-A0 | Renesas | IGBT |