RJH60F5DPK - Silicon N-Channel IGBT

Product Overview

Renesas Technology

Part number	RJH60F5DPK
Manufacturer	Renesas Technology
File Size	85.79 KB
Description	Silicon N-Channel IGBT
Datasheet	RJH60F5DPK Datasheet
Additional preview pages of the RJH60F5DPK datasheet.

Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode in one package.
Trench gate and thin wafer technology.
High speed switching tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) Outline.

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Published: Feb 18, 2010 |