BUZ45A
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
BUZ45A
Voss
500 V
RoS(on)
0.8 n
10
8.3 A
• HIGH VOLTAGE - FOR OFF-LINE SMPS
• ULTRA FAST SWITCHING FOR OPERATION
AT<100KHz
• EASY DRIVE - FOR REDUCED COST AND
SIZE
INDUSTRIAL APPLICATIONS:
• SWITCH MODE POWER SUPPLIES
• MOTOR CONTROLS
N - channel enhancement mode POWER MOS field
effect transistor. Easy drive and very fast switch-
ing times make this POWER MOS transistor ideal
for high speed switching applications.
Typical applications include switching power sup-
plies, uninterruptable power supplies and motor
speed control.
TO-3
INTERNAL SCHEMATIC
DIAGRAM
5
ABSOLUTE MAXIMUM RATINGS
Vos
VOGR
VGS
10
10M
Ptot
T5t9
Tj
Drain-source voltage (VGS =0)
Drain-gate voltage (RGS =20 Kn)
Gate-source voltage
Drain current (continuous) Tc =25°C
Drain current (pulsed)
Total dissipation at Tc <25°C
Storage temperature
Max. operating junction temperature
DIN humidity category (DIN 40040)
IEC climatic category (DIN IEC 68-1)
June 1988
500
500
±20
8.3
33
125
-55 to 150
150
C
55/150/56
V
V
V
A
A
W
°C
°C
1/4
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