STH272N6F7-6AG mosfet equivalent, n-channel power mosfet.
Order code STH272N6F7-6AG
VDS 60 V
RDS(on) max. 1.5 mΩ
ID 180 A
* Designed for automotive applications and AEC-Q101 qualified
* Among the lowest RDS(on) on th.
and AEC-Q101 qualified
* Among the lowest RDS(on) on the market
* Excellent FoM (figure of merit)
* Low Crss.
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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