STH275N8F7-6AG mosfet equivalent, n-channel power mosfet.
Order code STH275N8F7-2AG STH275N8F7-6AG
VDS RDS(on) max.
ID
80 V
2.1 mΩ
180 A
* AEC-Q101 qualified
* Among the lowest RDS(on) on the market
* Excellent.
* Switching applications
Description
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced .
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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