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STP3N150 - N-channel MOSFET

Datasheet Summary

Description

These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process.

The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.

Features

  • Order codes VDS RDS(on) max. ID PTOT STFW3N150 63 W STH3N150-2 1500 V 9Ω STP3N150 2.5 A 140 W STW3N150.
  • 100% avalanche tested.
  • Intrinsic capacitances and Qg minimized.
  • High speed switching.
  • Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ. ).

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Datasheet preview – STP3N150

Datasheet Details

Part number STP3N150
Manufacturer STMicroelectronics
File Size 672.53 KB
Description N-channel MOSFET
Datasheet download datasheet STP3N150 Datasheet
Additional preview pages of the STP3N150 datasheet.

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Full PDF Text Transcription

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STFW3N150, STH3N150-2 STP3N150, STW3N150 Datasheet N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages 23 1 TO-3PF TAB 3 2 TO-220 1 D(2, TAB) TAB 2 3 1 H2PAK-2 3 2 1 TO-247 D(TAB) G(1) G(1) Features Order codes VDS RDS(on) max. ID PTOT STFW3N150 63 W STH3N150-2 1500 V 9Ω STP3N150 2.5 A 140 W STW3N150 • 100% avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.) Applications • Switching applications S(3) (TO-3PF, TO-220 and TO-247) S(2, 3) (H2PAK-2) AM15557v1 Description These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process.
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