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SamHop Microelectronics

SP8013 Datasheet Preview

SP8013 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

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Green
Product
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
SP8013
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
-20V
-20A
7.9 @ VGS=-10V
11.2 @ VGS=-4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
Pin 1
TSON 3.3 x 3.3
D5
D6
D7
D8
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous c
IDM -Pulsed a c
TA=25°C
TA=70°C
PD
Maximum Power Dissipation
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
4G
3S
2S
1S
Limit
-20
±20
-20
-16
-115
1.67
1.07
-55 to 150
75
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Jun,13,2014
www.samhop.com.tw




SamHop Microelectronics

SP8013 Datasheet Preview

SP8013 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

SP8013
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=-250uA
VDS=-16V , VGS=0V
VGS= ±20V , VDS=0V
-20
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
SWITCHING CHARACTERISTICS b
tD(ON)
tr
tD(OFF)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=-250uA
VGS=-10V , ID=-10A
VGS=-4.5V , ID=-8.4A
VDS=-5V , ID=-10A
VDD=-10V
ID=-1A
VGS=-10V
RGEN= 6 ohm
VDS=-10V,ID=-10A,VGS=-10V
VDS=-10V,ID=-10A,VGS=-4.5V
VDS=-10V,ID=-10A,
VGS=-10V
-0.8
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD Diode Forward Voltage
VGS=0V,IS=-1A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Mounted on FR4 Board of 1 inch2 , 2oz.
Typ
-1.3
6.3
8.3
27
190
335
4000
1580
82
38
6
18
-0.83
Max Units
V
-1 uA
±10 uA
-1.8 V
7.9 m ohm
11.2 m ohm
S
ns
ns
ns
ns
nC
nC
nC
nC
-1.2 V
Jun,13,2014
2 www.samhop.com.tw


Part Number SP8013
Description P-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 8 Pages
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