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SamHop Microelectronics

SP8255 Datasheet Preview

SP8255 Datasheet

Dual N-Channel Enhancement Mode Field Effect Transistor

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Green
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP8255
Ver 1.1
PRODUCT SUMMARY
VDSS
20V
ID RDS(ON) (mΩ) Max
15.0 @ VGS=4.5V
16.0 @ VGS=4.0V
7A 16.5 @ VGS=3.7V
18.0 @ VGS=3.1V
23.0 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
DFN 2X5
D1/D2
G2
S2
S2
G1
S1S1
(Bottom view)
G1 3
S1 2
S1 1
Bottom Drain Contact
4 G2
5 S2
6 S2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a c
TA=25°C
TA=70°C
IDM -Pulsed c
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
R JC
Thermal Resistance, Junction-to-Case
Limit
20
±12
7
5.6
34
1.67
1.07
-55 to 150
75
5.5
Units
V
V
A
A
A
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Feb,21,2014
www.samhop.com.tw




SamHop Microelectronics

SP8255 Datasheet Preview

SP8255 Datasheet

Dual N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

SP8255
Ver 1.1
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=16V , VGS=0V
VGS= ±12V , VDS=0V
20
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr
tD(OFF)
Rise Time
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=1.0mA
VGS=4.5V , ID=3.5A
VGS=4.0V , ID=3.5A
VGS=3.7V , ID=3.5A
VGS=3.1V , ID=3.5A
VGS=2.5V , ID=3.5A
VDS=5V , ID=3.5A
VDS=10V,VGS=0V
f=1.0MHz
VDD=16V
ID=3.5A
VGS=4.5V
RGEN=6 ohm
VDS=16V,ID=7A,
VGS=4.5V
0.5
10.0
10.5
11.0
11.5
13.0
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=7A
Notes
a.Surface Mounted on FR4 Board of 1 inch2 , 1oz.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
Typ
0.9
12.5
13.0
13.5
14.5
18.0
22
335
136
62
60
210
675
465
8
1.7
4
0.87
Max Units
V
1 uA
±10 uA
1.5
15.0
16.0
16.5
18.0
23.0
V
m ohm
m ohm
m ohm
m ohm
m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.3 V
Feb,21,2014
2 www.samhop.com.tw


Part Number SP8255
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 7 Pages
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