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SamHop Microelectronics

STB1082 Datasheet Preview

STB1082 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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STB1082Green
Product
Sa mHop Microelectronics C orp.
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
100V 38A 30 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-263 package.
D
GS
S TB S E R IE S
T O -263(DD-P AK )
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
Limit
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous c
TC=25°C
TC=70°C
100
±20
38
31.8
IDM -Pulsed a c
112
EAS Single Pulse Avalanche Energy d
100
TC=25°C
PD Maximum Power Dissipation
TC=70°C
136
95
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.1
62.5
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Apr,08,2016
www.samhop.com.tw




SamHop Microelectronics

STB1082 Datasheet Preview

STB1082 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

STB1082
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
IGSS Gate-Body leakage current
VGS=0V , ID=250uA
VDS=80V , VGS=0V
VGS= ±20V , VDS=0V
100
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
Drain-Source On-State Resistance
gFS Forward Transconductance
VDS=VGS , ID=250uA
VGS=10V , ID=19A
VDS=10V , ID=19A
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On DelayTime
tr Rise Time
tD(OFF)
Turn-Off DelayTime
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=50V,ID=19A,VGS=10V
VDS=50V,ID=19A,
VGS=10V
2.0
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD Diode Forward Voltage
VGS=0V,IS=6A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.
e.Mounted on FR4 Board of 1 inch2 , 2oz.
Typ
3.0
24
56
1217
147
98
31
33
22
36
19
2.9
5.1
0.78
Max Units
1
±100
V
uA
nA
4.0 V
30 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.3 V
Apr,08,2016
2 www.samhop.com.tw


Part Number STB1082
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 8 Pages
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