* 3.0V & 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1.

ORDERING INFORMATION Part No. K4M281633F-R(B)E/N/G/C/L/F75 K4M281633F-R(B)E/N/G/C/L/F1H K4M281633F-R(B)E/N/G/C/L/F1L M.

The K4M281633F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system .

K4M281633F-C

K4M281633F-F1L

K4M281633F-G

K4M281633F-N

K4M281633F-RE

K4M281633F

K4M28163LF

K4M28163LH

K4M28163PF

K4M28163PF-F75

K4M28163PF-R

K4M28163PF-RBGF75

K4M28163PF-RG