K4M56163PE-RG datasheet, 54fbga equivalent, Samsung

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Features and benefits

* 1.8V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3.

Application

ORDERING INFORMATION Part No. K4M56163PE-R(B)G/F90 K4M56163PE-R(B)G/F1L Max Freq. 111MHz(CL=3), 83MHz(CL=2) 105MHz(CL=.

Description

The K4M56163PE is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design make a device controlled precisely with the use of s.

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