K4M56163PG 4M x 16Bit x 4 Banks Mobile SDRAM Datasheet

K4M56163PG Key Features

1.8V power supply
LVCMOS patible with multiplexed address
Four banks operation
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type
EMRS cycle with address key programs
All inputs are sampled at the positive going edge of the system clock
Burst read single-bit write operation
Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature pensated Self Refresh) -.
DQM for masking
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Manufacturer	Part Number	Description
Samsung Semiconductor	K4M56163PE-F1L	4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Samsung Semiconductor	K4M56163PE-F90	4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Samsung Semiconductor	K4M56163PE-R	4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Samsung Semiconductor	K4M56163PE-RG	4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA