K4M28163LF sdram equivalent, 2m x 16bit x 4 banks mobile sdram.
* 2.5V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3.
ORDERING INFORMATION
Part No. K4M28163LF-R(B)E/N/S/C/L/R75 K4M28163LF-R(B)E/N/S/C/L/R1H K4M28163LF-R(B)E/N/S/C/L/R1L
.
The K4M28163LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system .
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 141.77KB)