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K4M28163LF - 2M x 16Bit x 4 Banks Mobile SDRAM

Description

The K4M28163LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

  • 2.5V power supply.
  • LVCMOS compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
  • EMRS cycle with address key programs.
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • Special Function Support. -. PASR (Parti.

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Other Datasheets by Samsung Semiconductor

Part Number Description
K4M28163LH Mobile SDRAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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K4M28163LF - R(B)E/N/S/C/L/R 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 2.5V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking. • Auto refresh. • • • • 64ms refresh period (4K cycle). Commercial Temperature Operation (-25°C ~ 70°C). Extended Temperature Operation (-25°C ~ 85°C). 54Balls FBGA with 0.
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