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K7B323635C, K7B321835C 1Mx36 & 2Mx18 Synchronous SRAM

K7B323635C Description

K7B323635C K7B321835C 1Mx36 & 2Mx18 Synchronous SRAM 36Mb Sync.Burst SRAM Specification 100LQFP with Pb / Pb-Free (RoHS compliant) INFORMATION IN .
The K7B323635C and K7B321835C are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium a.

K7B323635C Features

* Synchronous Operation.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* VDD= 2.5 or 3.3V +/- 5% Power Supply.
* 5V Tolerant Inputs Except I/O Pins.
* Byte Writable Function.
* Global Writ

K7B323635C Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice. w

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: K7B323635C, K7B321835C. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
K7B323635C, K7B321835C
Manufacturer
Samsung semiconductor
File Size
477.15 KB
Datasheet
K7B321835C_Samsungsemiconductor.pdf
Description
1Mx36 & 2Mx18 Synchronous SRAM
Note
This datasheet PDF includes multiple part numbers: K7B323635C, K7B321835C.
Please refer to the document for exact specifications by model.

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📌 All Tags

1Mx36 2Mx18 Synchronous SRAM Samsung semiconductor
Samsung semiconductor K7B323635C-like datasheet