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K7B323635C Datasheet, Samsung semiconductor

K7B323635C Datasheet, Samsung semiconductor

K7B323635C

datasheet Download (Size : 477.15KB)

K7B323635C Datasheet

K7B323635C sram equivalent, 1mx36 & 2mx18 synchronous sram.

K7B323635C

datasheet Download (Size : 477.15KB)

K7B323635C Datasheet

Features and benefits


* Synchronous Operation.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* VDD= 2.5 or 3.3V +/- 5% Power.

Application

where Product failure could result in loss of life or personal or physical harm, or any military or defense application,.

Description

The K7B323635C and K7B321835C are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 1M(2M) words of 36(18) bits and integrates address and .

Image gallery

K7B323635C Page 1 K7B323635C Page 2 K7B323635C Page 3

TAGS

K7B323635C
1Mx36
2Mx18
Synchronous
SRAM
Samsung semiconductor

Manufacturer


Samsung semiconductor

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