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SeCoS

2N7002KW Datasheet Preview

2N7002KW Datasheet

N-channel MOSFET

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Elektronische Bauelemente
2N7002KW
115mA , 60V, RDS(ON) 4
N-Ch Small Signal MOSFET with ESD Protection
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
RDS(ON), VGS@10V, IDS@500mA=3
RDS(ON), VGS@4.5V, IDS@200mA=4
Advanced Trench Process Technology
High Density Cell Design For Ultra Low On-Resistance
Very Low Leakage Current In Off Condition
Specially Designed for Battery Operated Systems,
Solid-State Relays DriversRelays, Displays, Lamps,
Solenoids, Memories, etc.
ESD Protected 2KV HBM
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: SOT-323 Package
Terminals: Solderable per MIL-STD-750,
Method 2026
MARKING
K72
PACKAGE INFORMATION
Package
MPQ
SOT-323
3K
LeaderSize
7’ inch
SOT-323
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
--
0.650 TYP.
Drain


Gate

Source
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1
Maximum Power Dissipation
TA=25°C
TA=75°C
Thermal Resistance Junction-Ambient (PCB mounted) 2
Operating Junction and Storage Temperature
Notes:
1. Maximum DC current limited by the package.
2. Surface mounted on FR4 board, t < 5sec.
VDS
VGS
ID
IDM
PD
RJA
TJ, TSTG
Rating
60
±20
115
800
200
120
625
-55~150
Unit
V
V
mA
mA
mW
°C / W
°C
http://www.SeCoSGmbH.com/
31-Mar-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4




SeCoS

2N7002KW Datasheet Preview

2N7002KW Datasheet

N-channel MOSFET

No Preview Available !

Elektronische Bauelemente
2N7002KW
115mA , 60V, RDS(ON) 4
N-Ch Small Signal MOSFET with ESD Protection
N-CHANNEL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ.2 Max. Unit
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Drain-Source On-Resistance
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward Transconductance
BVDSS
60
-
-
V VGS=0, ID=10μA
VGS(th)
1
- 2.5
VDS= VGS, ID=250μA
RDS(ON)
-
-
4
VGS=4.5V, ID=200mA
- -3
VGS=10V, ID=500mA
IDSS - - 1 μA VDS=60V, VGS=0
IGSS - - ±10 μA VDS=0, VGS= ±20V
gfs 100 -
- mS VDS=15V, ID=250mA
Dynamic
Total Gate Charge
Qg - - 0.8 nC VDS=15V, VGS=4.5V, ID=200mA
Turn-On Time
Turn-Off Time
t(on) - - 20
VDD=30V, RL=150,
nS ID=200mA, VGEN=10V,
t(off - - 40
RG=10 
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Forward Voltage
Continuous Diode Forward Current
Pulse Diode Forward Current
Ciss - - 35
Coss - - 10
Crss - - 5
Source-Drain Diode
VSD - 0.82 1.3
IS - - 115
ISM - - 800
pF VDS=25V, VGS=0V, f=1MHz
V IS=200mA, VGS=0V
mA
mA
http://www.SeCoSGmbH.com/
31-Mar-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4


Part Number 2N7002KW
Description N-channel MOSFET
Maker SeCoS
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2N7002KW Datasheet PDF






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