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2N7002KW - N-channel MOSFET

Datasheet Summary

Features

  • RDS(ON), VGS@10V, IDS@500mA=3.
  • RDS(ON), VGS@4.5V, IDS@200mA=4.
  • Advanced Trench Process Technology.
  • High Density Cell Design For Ultra Low On-Resistance.
  • Very Low Leakage Current In Off Condition.
  • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers：Relays, Displays, Lamps, Solenoids, Memories, etc.
  • ESD Protected 2KV HBM.
  • In compliance with EU RoHS 2002/95/EC directives.

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Datasheet Details

Part number 2N7002KW
Manufacturer SeCoS
File Size 530.96 KB
Description N-channel MOSFET
Datasheet download datasheet 2N7002KW Datasheet
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Full PDF Text Transcription

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Elektronische Bauelemente 2N7002KW 115mA , 60V, RDS(ON) 4  N-Ch Small Signal MOSFET with ESD Protection RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  RDS(ON), VGS@10V, IDS@500mA=3  RDS(ON), VGS@4.5V, IDS@200mA=4  Advanced Trench Process Technology  High Density Cell Design For Ultra Low On-Resistance  Very Low Leakage Current In Off Condition  Specially Designed for Battery Operated Systems, Solid-State Relays Drivers：Relays, Displays, Lamps, Solenoids, Memories, etc.
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