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BSM25GAL120DN2 - IGBT

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Part number BSM25GAL120DN2
Manufacturer Siemens Semiconductor Group
File Size 62.20 KB
Description IGBT
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BSM 25 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 25 GAL 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package Ordering Code 1200V 38A HALF BRIDGE GAL 1 C67076-A2009-A70 Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 38 25 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 76 50 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 200 W + 150 -55 ... + 150 ≤ 0.6 ≤1 ≤ 0.
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