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Siemens Electronic Components Datasheet

BUZ101S Datasheet

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)

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SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
Preliminary data
BUZ 101 S
SPP22N05
Type
BUZ 101 S
VDS
55 V
ID
22 A
RDS(on)
0.06
Pin 1
G
Pin 2
D
Pin 3
S
Package
TO-220 AB
Ordering Code
Q67040-S4013-A2
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 22 A, VDD = 25 V, RGS = 25
L = 372 µH, Tj = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Reverse diode dv/dt
IS = 22 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Symbol
ID
IDpuls
EAS
IAR
EAR
dv/dt
VGS
Ptot
Values
22
16
88
90
22
5.5
6
± 20
55
Unit
A
mJ
A
mJ
kV/µs
V
W
Semiconductor Group
1
04/Nov/1997



Siemens Electronic Components Datasheet

BUZ101S Datasheet

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)

No Preview Available !

Preliminary data
BUZ 101 S
SPP22N05
Maximum Ratings
Parameter
Operating temperature
Storage temperature
Thermal resistance, junction - case
Thermal resistance, junction - ambient
IEC climatic category, DIN IEC 68-1
Symbol
Tj
Tstg
RthJC
RthJA
Values
-55 ... + 175
-55 ... + 175
2.7
62
55 / 175 / 56
Unit
°C
K/W
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 40 µA
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = -40 °C
VDS = 50 V, VGS = 0 V, Tj = 25 °C
VDS = 50 V, VGS = 0 V, Tj = 150 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 10 V, ID = 16 A
V(BR)DSS
55
VGS(th)
2.1
IDSS
-
-
-
IGSS
-
RDS(on)
-
-
3
-
0.1
-
10
0.04
max.
-
4
0.1
1
100
100
0.06
Unit
V
µA
nA
Semiconductor Group
2
04/Nov/1997


Part Number BUZ101S
Description SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
Maker Siemens Semiconductor Group
Total Page 8 Pages
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