SHF-0289Z Description
Sirenza Microdevices’ SHF-0289 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB pression for the SHF-0289 is +30dBm when biased for Class AB operation at 7V,200mA.
SHF-0289Z Key Features
- Now available in Lead Free, RoHS pounds that contain no antimony trioxide nor halogenated fire retarpliant, & Green Pack
- High Linearity Performance at 1.96 GHz +30 dBm P1dB +43 dBm OIP3 +23.7 dBm IS-95 Channel Power +14.6 dB Gain
- +21.7 dBm W-CDMA Channel Power
- High Drain Efficiency (>50% at P1dB)
- See App Note AN-032 for circuit details