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SHF-0289Z Datasheet Gaas Hfet

Manufacturer: Sirenza Microdevices

Overview: Product.

General Description

Sirenza Microdevices’ SHF-0289 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package.

The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.

Output power at 1dB compression for the SHF-0289 is +30dBm when biased for Class AB operation at 7V,200mA.

Key Features

  • Directive 2002/95. This package is also manufactured with green molding.
  • Now available in Lead Free, RoHS compounds that contain no antimony trioxide nor halogenated fire retarCompliant, & Green Packaging dants. Typical Gain Performance (7V,200mA) 40 35 30 25 20 15 10 5 0 0 1 2 Gain, Gmax (dB) Gmax Gain.
  • High Linearity Performance at 1.96 GHz +30 dBm P1dB +43 dBm OIP3 +23.7 dBm IS-95 Channel Power +14.6 dB Gain.
  • +21.7 dBm W-CDMA Channel Power.
  • High Drain E.

SHF-0289Z Distributor & Price

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