Part number:
SGM2014AM
Manufacturer:
Sony Corporation
File Size:
51.60 KB
Description:
Gaas n-channel dual-gate mes fet.
SGM2014AM Datasheet (51.60 KB)
* Low voltage operation
* Low noise: NF = 1.5dB (typ.) at 900MHz
* High gain: Ga = 18dB (typ.) at 900MHz
* Low cross-modulation
* High stability
* Built-in gate-protection diode Application UHF band amplifier, mixer and oscillator Structure GaAs N-chan
SGM2014AM Datasheet (51.60 KB)
SGM2014AM
Sony Corporation
51.60 KB
Gaas n-channel dual-gate mes fet.
📁 Related Datasheet
SGM2014AN GaAs N-channel Dual-Gate MES FET (Sony Corporation)
SGM2014M GaAs N-channel Dual Gate MES FET (Sony Corporation)
SGM2013 Linear Regulators (SG Micro)
SGM2013N GaAs N-channel Dual-Gate MES FET (Sony Corporation)
SGM2015 Linear Regulators (Shengbang Microelectronics)
SGM2016AM GaAs N-channel Dual-Gate MES FET (Sony Corporation)
SGM2016AN GaAs N-channel Dual-Gate MES FET (Sony Corporation)
SGM2016AP GaAs N-channel Dual-Gate MES FET (Sony Corporation)
SGM2016M GaAs N-channel Dual-Gate MES FET (Sony Corporation)
SGM2016P GaAs N-channel Dual-Gate MES FET (Sony Corporation)
