3 z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 1 WT6 * 2.

Standard Product WNM2016 is Pb-free. Configuration (Top View) Features 3 z z z z z Trench Technology Supper high dens.

The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) D 3 with low gate 1 G 2 S charge. This device is suitable for use in DC-DC conversion and power switch appl.

WNM2020

WNM2020-3

WNM2021

WNM2023

WNM2024

WNM2025

WNM2027

WNM2029

WNM2030

WNM2030-3

WNM2034

WNM2046

WNM2046B