TSM160N10
Key Features
- Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.) Low Crss typical @ 260pF (Typ.)
- Part: TSM160N10
- Description: 100V N-Channel Power MOSFET
- Category: MOSFET
- Manufacturer: Taiwan Semiconductor
- Size: 450.22 KB