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TSM160N10 Datasheet, Taiwan Semiconductor

TSM160N10 Datasheet, Taiwan Semiconductor

TSM160N10

datasheet Download (Size : 450.22KB)

TSM160N10 Datasheet

TSM160N10 mosfet

100v n-channel power mosfet.

TSM160N10

datasheet Download (Size : 450.22KB)

TSM160N10 Datasheet

TSM160N10 Features and benefits

TSM160N10 Features and benefits


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*
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* Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.) Low Crss typical @ 260pF (Typ.) Block Diagram Orderin.

TSM160N10 Application

TSM160N10 Application

Customers using or selling these products for use in such applications do so at their own risk and agree to fully indem.

TSM160N10 Description

TSM160N10 Description

only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or impli.

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TAGS

TSM160N10
100V
N-Channel
Power
MOSFET
Taiwan Semiconductor

Manufacturer


Taiwan Semiconductor

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