TSM16ND50CI

N-Channel Power MOSFET

Taiwan Semiconductor

* 100% UIS and Rg tested

* Advanced planar process

* Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC

* Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) Qg 500 0.35 53 V Ω nC APPLICATIONS

TSM16ND50CI

Taiwan Semiconductor

257.27 KB

N-channel power mosfet.

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TSM16ND50CI N-Channel Power MOSFET Taiwan Semiconductor

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