TSM160N10 Datasheet, mosfet equivalent, Taiwan Semiconductor

TSM160N10 Features

• Mosfet
• Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.) Low Crss typical @ 260pF (Typ.) Block Diagram Orderi

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TSM160N10

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Taiwan Semiconductor

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📄 Datasheet

Description:

100v n-channel power mosfet. only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s te

TSM160N10 Application

• Applications Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for an

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TSM160N10

Taiwan Semiconductor

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