TSM160N10 Datasheet (Taiwan Semiconductor) - 100V N-Channel Power MOSFET

TSM160N10, 100V N-Channel Power MOSFET

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TSM160N10 Features

* Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.) Low Crss typical @ 260pF (Typ.) Block Diagram Ordering Information Part No. TSM160N10CZ C0 Package TO-220 Packing 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC