TSM160N10 - 100V N-Channel Power MOSFET

Taiwan Semiconductor

Datasheet Details

Part number	TSM160N10
Manufacturer	Taiwan Semiconductor
File Size	450.22 KB
Description	100V N-Channel Power MOSFET
Datasheet	TSM160N10-TaiwanSemiconductor.pdf

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Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max. ) Low gate charge typical @ 154nC (Typ. ) Low Crss typical @ 260pF (Typ. ) Block Diagram Ordering Information Part No. TSM160N10CZ C0 Package TO-220 Packing 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC=25°C Continuous Drain Current TC=70°C TA=25°C TA=70°C Drain Current-Pulsed Note 1 Avalanche Current, L=0.5mH Avalanche Ene.

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Published: Aug 5, 2014 |