TSM160N10

100V N-Channel Power MOSFET

Taiwan Semiconductor

TSM160N10 Features

* Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.) Low Crss typical @ 260pF (Typ.) Block Diagram Ordering Information Part No. TSM160N10CZ C0 Package TO-220 Packing 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC

TSM160N10 General Description

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TSM160N10 Datasheet (450.22 KB)

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Part number:

TSM160N10

Manufacturer:

Taiwan Semiconductor

File Size:

450.22 KB

Description:

100v n-channel power mosfet.
TSM160N10 100V N-Channel Power MOSFET TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 100 RDS(on)(mΩ) 5.5 @ VGS =10V ID (.

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TSM160N10 100V N-Channel Power MOSFET Taiwan Semiconductor

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TSM160N10 Features

TSM160N10 General Description

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