TSM160N10 100V N-Channel Power MOSFET

Taiwan Semiconductor

Description

TSM160N10 100V N-Channel Power MOSFET TO-220 Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V) 100 RDS(on)(mΩ) 5.5 @ VGS =10V ID (.
only.

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Datasheet Specifications

Part number: TSM160N10
Manufacturer: Taiwan Semiconductor
File Size: 450.22 KB
Datasheet: TSM160N10-TaiwanSemiconductor.pdf
Description: 100V N-Channel Power MOSFET

Features

* Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max. ) Low gate charge typical @ 154nC (Typ. ) Low Crss typical @ 260pF (Typ. ) Block Diagram Ordering Information Part No. TSM160N10CZ C0 Package TO-220 Packing 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC

Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: B13

TSM160N10 Distributors

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TSM160N10 100V N-Channel Power MOSFET Taiwan Semiconductor

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