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TSM4953D - 30V Dual P-Channel MOSFET

General Description

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Key Features

  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

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Datasheet Details

Part number TSM4953D
Manufacturer Taiwan Semiconductor Company
File Size 382.35 KB
Description 30V Dual P-Channel MOSFET
Datasheet download datasheet TSM4953D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSM4953D 30V Dual P-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 2. Gate 1 7. Drain 3. Source 2 6. Drain 4. Gate 2 5. Drain www.DataSheet4U.com 1 1 2 2 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 60 @ VGS = 10V 90 @ VGS = 4.5V ID (A) -4.9 -3.7 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch PA Switch Ordering Information Part No. TSM4953DCS RF Package SOP-8 Packing 2.5Kpcs / 13” Reel Dual P-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.