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2N3789 Datasheet - Toshiba

2N3789, SILICON PNP Transistor

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2N3789-Toshiba.pdf

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Datasheet Details

Part number:

2N3789

Manufacturer:

Toshiba ↗

File Size:

85.57 KB

Description:

SILICON PNP Transistor

2N3789 Features

* . High Gain and Excellent hFE Linearity: hFE=15 (Min.) @ VC E=-2V, I C=-3A . Low Saturation Voltage: VCE(sat)=-1.0V (Max.) @ Ic=-4A, I B=-0.4A Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC a Collector-Base Voltage

* Collector-Emitter Voltage 38 Emitter-Base Voltage

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TLP2168 Stock/Price

Distributor
Toshiba America Electronic Components
TLP2168(F)
- Rail/Tube (Alt: TLP2168(F))
Avnet Americas
0 In Stock
0
Unit Price : $0