2N3789 transistor equivalent, silicon pnp transistor.
. High Gain and Excellent hFE Linearity: hFE=15 (Min.) @ VC E=-2V, I C=-3A
. Low Saturation Voltage: VCE(sat)=-1.0V (Max.)
@ Ic=-4A, I B=-0.4A
Unit in mm
MAXIMUM RAT.
FEATURES
. High Gain and Excellent hFE Linearity: hFE=15 (Min.) @ VC E=-2V, I C=-3A
. Low Saturation Voltage: VCE(sa.
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