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2SB997 - Silicon PNP Transistor

This page provides the datasheet information for the 2SB997, a member of the 2SB998 Silicon PNP Transistor family.

Features

  • . High DC Current Gain,: hFE=2000(Min. ) (at Vce=-3V, Ic=-3A; . Low Saturation Voltage : VcE(sat)=-l .5V(Max. ) (at Ic=-3A^ . Complementary to 2SD1357, 2SD1358 and 2SD1359.

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Full PDF Text Transcription

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: E557 2SB998 2SB999I SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. FEATURES . High DC Current Gain,: hFE=2000(Min. ) (at Vce=-3V, Ic=-3A; . Low Saturation Voltage : VcE(sat)=-l .5V(Max. ) (at Ic=-3A^ . Complementary to 2SD1357, 2SD1358 and 2SD1359 INDUSTRIAL APPLICATIONS Unit in mm 10.3 MAX 03.2±O.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage 2SB997 2SB998 2SB999 Collector-Emitter Voltage 2SB997 2SB998 2SB999 SYMBOL VCBO VCEO RATING -100 -80 -60 -100 -80 -60 UNIT + Q25 176-Q15 2.54±0.2£ Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT VEBO IC IB PC -stg -5 -7 -0.
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