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HN2S03FU Toshiba (https://www.toshiba.com/) Silicon Epitaxial Schottky Barrier Type Diode

Toshiba
Description TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S03FU HN2S03FU High Speed Switching Application Unit: mm z HN2S03FU is composed of 3 independent diodes. z Low forward voltage : VF (3) = 0.50V (typ.) z Low reverse current : IR= 0.5μA (max) z Small total capacitance : CT = 3.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) rever...
Features iability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. r...

Datasheet PDF File HN2S03FU Datasheet 204.51KB

HN2S03FU   HN2S03FU   HN2S03FU  




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