Datasheet Summary
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
High Speed Switching Application
Unit: mm z HN2S03FU is posed of 3 independent diodes. z Low forward voltage
: VF (3) = 0.50V (typ.) z Low reverse current
: IR= 0.5μA (max) z Small total capacitance : CT = 3.9pF...