Datasheet4U Logo Datasheet4U.com

TC58BVG2S0HTA00 - 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM

📥 Download Datasheet

Datasheet Details

Part number TC58BVG2S0HTA00
Manufacturer Toshiba
File Size 347.62 KB
Description 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
Datasheet download datasheet TC58BVG2S0HTA00 Datasheet

General Description

The TC58BVG2S0HTA00 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.

The device has a 4224-byte static register which allows program and read data to be transferred between the register and the memory cell array in 4224-bytes increments.

The Erase operation is implemented in a single block unit (256 Kbytes + 8 Kbytes: 4224 bytes × 64 pages).

Overview

TC58BVG2S0HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND.

Key Features

  • Organization Memory cell array Register Page size Block size x8 4224 × 128K × 8 4224 × 8 4224 bytes (256K + 8K) bytes.
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read.
  • Mode control Serial input/output Command control.
  • Number of valid blocks Min 2008 blocks Max 2048 blocks.
  • Power supply VCC = 2.7V to 3.6V.
  • Access time Cell array to r.

More Datasheets from Toshiba

Part Number Description
TC58BVG2S0HTAI0 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
TC58BVG2S0HBAI4 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
TC58BVG2S0HBAI6 4G-BIT (512M x 8 BIT) CMOS NAND E2PROM
TC58BVG0S3HBAI4 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM
TC58BVG0S3HBAI6 1G-BIT (128M x 8 BIT) CMOS NAND E2PROM
TC58BVG0S3HTA00 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM
TC58BVG0S3HTAI0 1 GBIT (128M x 8-BIT) CMOS NAND E2PROM
TC58BVG1S3HBAI4 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
TC58BVG1S3HBAI6 2G-BIT (256M x 8 BIT) CMOS NAND E2PROM
TC58BVG1S3HTA00 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM