TC58BVG2S0HTA00 Overview
Key Specifications
Package: TFSOP
Mount Type: Surface Mount
Operating Voltage: 3.3 V
Max Voltage (typical range): 3.6 V
Description
The TC58BVG2S0HTA00 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks. The device has a 4224-byte static register which allows program and read data to be transferred between the register and the memory cell array in 4224-bytes increments.
Key Features
- Organization Memory cell array Register Page size Block size x8 4224 × 128K × 8 4224 × 8 4224 bytes (256K + 8K) bytes
- Number of valid blocks Min 2008 blocks Max 2048 blocks
- Power supply VCC = 2.7V to 3.6V
- Access time Cell array to register 55 µs typ. (Single Page Read) / 90µs typ. (Multi Page Read) Serial Read Cycle 25 ns min (CL=50pF)
- Program/Erase time Auto Page Program Auto Block Erase 340 µs/page typ. 2.5 ms/block typ
- Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby 30 mA max. 30 mA max 30 mA max 50 µA max
- Package TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)
