TC58DVM92A1FT0 - 512M-Bit CMOS NAND EPROM

Toshiba

TC58DVM92A1FT0 Datasheet Preview — Preview of TC58DVM92A1FT0 PDF

Datasheet Details

Part number	TC58DVM92A1FT0
Manufacturer	Toshiba ↗
File Size	468.10 KB
Description	512M-Bit CMOS NAND EPROM
Datasheet	TC58DVM92A1FT0_Toshiba.pdf

TC58DVM92A1FT0 Product details

Description

The device is a single 3.3 V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 4096 blocks.

Features

x Organization Memory cell allay 528 u 128K u 8 Register 528 u 8 Page size 528 bytes Block size (16K 512) bytes x Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Block Program, Multi Block Erase x Mode control Serial input/output Command control x Power supply VCC 2.7 V to 3.6 V x Program/Erase Cycles 1E5 cycle (with ECC) x Access time Cell array to register 25 Ps max Serial Read Cycle 50 ns min x Operating current Read (50 ns cycle) 10 mA typ. Program (avg. ).

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Published: Mar 24, 2006 |