The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet4U.com
TOSHIBA
MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band)
Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 5.0 dB at 14.0 GHz to 14.5 GHz • Broad band internally matched • Hermetically sealed package RF Performance Specifications (Ta = 25° C)
Characteristics Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel-Temperature Rise Symbol P1dB G1dB IDS1 ∆G ηadd IM3 IDS2 ∆Tch VDSxIDSxRth(c-c) Condition Unit dBm dB A dB Min. 38.5 4.0 – – – -42 – – Typ. 39.5 5.0 3.4 – 20 -45 3.4 – Max – – 4.
TIM1414-8L Datasheet
