TIM1414-8L Datasheet | Toshiba

.. TOSHIBA MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band) Features - Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level - High power - P1dB = 39.5 dBm at 14.0 GHz to 14.5 GHz - High gain - G1dB = 5.0 dB at 14.0 GHz to 14.5 GHz - Broad band internally matched - Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics Output Power at 1dB pression Point Power Gain at 1dB pression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel-Temperature Rise Symbol P1dB G1dB IDS1 ∆G ηadd IM3 IDS2 ∆Tch VDSxIDSxRth(c-c...