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Toshiba Electronic Components Datasheet

TTC016 Datasheet

NPN Transistor

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Bipolar Transistors Silicon NPN Epitaxial Type
TTC016
1. Applications
• High-Speed Switching
• DC-DC Converters
2. Features
(1) High DC current gain
: hFE = 400 to 1000 (IC = 0.5 A)
(2) Low collector saturation voltage : VCE(sat) = 0.22 V (max) (IC = 1.6 A, IB = 32 mA)
(3) High-speed switching
: tf = 95 ns (typ.)
3. Packaging and Internal Circuit
TTC016
1. Base
2. Collector (Heatsink)
3. Emitter
New PW-Mold
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEX
100
Collector-emitter voltage
VCEO
50
Emitter-base voltage
VEBO
9
Collector current (DC)
(Note 1)
IC
5
A
Collector current (pulsed)
(Note 1)
ICP
10
Base current
IB
0.5
Collector power dissipation
(Ta = 25 )
PC
1.2
W
Collector power dissipation
(Tc = 25 )
PC
24
Junction temperature
(Note 2)
Tj
175
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the junction temperature does not exceed 175 .
Note 2: The definitions of the absolute maximum junction and storage temperatures are based on AEC-Q101.
Start of commercial production
2014-12
1
2015-03-05
Rev.1.0


Toshiba Electronic Components Datasheet

TTC016 Datasheet

NPN Transistor

No Preview Available !

TTC016
5. Electrical Characteristics
5.1. Static Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
ICBO
IEBO
V(BR)CEO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VCB = 120 V, IE = 0 A
VEB = 9 V, IC = 0 A
IC = 10 mA, IB = 0 A
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 1.6 A
IC = 1.6 A, IB = 32 mA
IC = 1.6 A, IB = 32 mA
Min Typ. Max Unit
100
nA
100
50
V
400
1000
200
0.22
V
1.10
5.2. Dynamic Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Switching time (rise time)
Switching time (storage time)
Switching time (fall time)
Symbol
Test Condition
tr
See Figure 5.2.1.
tstg
VCC 24 V, RL = 15 ,
IB1 = 32 mA, IB2 = 53 mA,
tf
Duty cycle 1 %
Min Typ. Max Unit
60
ns
500
95
6. Marking (Note)
Fig. 5.2.1 Switching Time Test Circuit
Fig. 6.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
2015-03-05
Rev.1.0


Part Number TTC016
Description NPN Transistor
Maker Toshiba
PDF Download

TTC016 Datasheet PDF






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