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Bipolar Transistors Silicon NPN Epitaxial Type
TTC016
1. Applications
• High-Speed Switching • DC-DC Converters
2. Features
(1) High DC current gain
: hFE = 400 to 1000 (IC = 0.5 A)
(2) Low collector saturation voltage : VCE(sat) = 0.22 V (max) (IC = 1.6 A, IB = 32 mA)
(3) High-speed switching
: tf = 95 ns (typ.)
3. Packaging and Internal Circuit
TTC016
1. Base 2. Collector (Heatsink) 3. Emitter
New PW-Mold
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEX
100
Collector-emitter voltage
VCEO
50
Emitter-base voltage
VEBO
9
Collector current (DC)
(Note 1)
IC
5
A
Collector current (pulsed)
(Note 1)
ICP
10
Base current
IB
0.
TTC016 Datasheet
