TC2211 Datasheet | Transcom

REV4_20070504 Plastic Packaged Low Noise PHEMT Ga As FETs Features - - - - - - - - 1.5 d B Typical Noise Figure at 12 GHz High Associated Gain: Ga = 6.5 d B Typical at 12 GHz 21.5 d Bm Typical Power at 12 GHz 7.5 d B Typical Linear Power Gain at 12 GHz Lg = 0.25 µm, Wg = 300 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested - Low Cost Plastic SOT143 Package PHOTO ENLARGEMENT DESCRIPTION The TC2211 is a high performance field effect transistor housed in a plastic package with TC1201 PHEMT Chip. Its low noise figure makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol CONDITIONS NF Noise Figure at VDS = 4 V, IDS = 25 m A, f = 12GHz Ga P1d B GL IDSS gm VP BVDGO Rth Associated Gain at VDS = 4 V, IDS = 25 m A, f = 12GHz Output Power at 1d B Gain pression Point, f = 12GHz VDS = 6 V, IDS = 40 m A Linear Power Gain, f = 12GHz VDS = 6 V, IDS = 40 m A Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 0.6m A Drain-Gate Breakdown Voltage at IDGO = 0.15m A Thermal Resistance 9 MIN http://..net/ TYP 1.5 6.5 21.5 7.5 90 100 -1.0- 12 150 MAX 2 UNIT d B d B d Bm d B m A m S Volts Volts °C/W 5.5 20.5...