Datasheet4U Logo Datasheet4U.com

TC2211 - Plastic Packaged Low Noise PHEMT GaAs FETs

Description

The TC2211 is a high performance field effect transistor housed in a plastic package with TC1201 PHEMT Chip.

Its low noise figure makes this device suitable for use in low noise amplifiers.

All devices are 100 % DC tested to assure consistent quality.

Features

  • 1.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 6.5 dB Typical at 12 GHz 21.5 dBm Typical Power at 12 GHz 7.5 dB Typical Linear Power Gain at 12 GHz Lg = 0.25 µm, Wg = 300 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested.
  • Low Cost Plastic SOT143 Package PHOTO.

📥 Download Datasheet

Datasheet Details

Part number TC2211
Manufacturer Transcom
File Size 215.12 KB
Description Plastic Packaged Low Noise PHEMT GaAs FETs
Datasheet download datasheet TC2211 Datasheet

📁 Similar Datasheet

  • TC220C - DRAM Core (Toshiba)
  • TC220E - DRAM Core (Toshiba)
  • TC220LL - Toroidal Chokes Low Loss (Allied Components International)
  • TC222 - 32-Bit Microcontroller (Infineon)
  • TC223 - 32-Bit Microcontroller (Infineon)
  • TC224 - 32-Bit Microcontroller (Infineon)
  • TC22V - 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators (Tak Cheong)
  • TC2-1TX+ - RF Transformer (Mini-Circuits)
  • TC2-72T+ - RF Transformer (Mini-Circuits)
  • TC20 - Small Induction Transistor (NEC)
Other Datasheets by Transcom
  • TC2201 - Plastic Packaged Low Noise PHEMT GaAs FETs
  • TC2281 - Low Noise and High Dynamic Range Packaged GaAs FETs
  • TC2282 - Low Noise Ceramic Packaged PHEMT GaAs FETs
  • TC2181 - Low Noise and High Dynamic Range Packaged GaAs FETs
  • TC2182 - Low Noise Ceramic Packaged PHEMT GaAs FETs
  • TC2571 - PHEMT GaAs Power FETs
  • TC2591 - 1 W Flange Ceramic Packaged PHEMT GaAs Power FETs
  • TC2696 - 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs

Full PDF Text Transcription

Click to expand full text
TC2211 REV4_20070504 Plastic Packaged Low Noise PHEMT GaAs FETs FEATURES • • • • • • • • 1.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 6.5 dB Typical at 12 GHz 21.5 dBm Typical Power at 12 GHz 7.5 dB Typical Linear Power Gain at 12 GHz Lg = 0.25 µm, Wg = 300 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested • Low Cost Plastic SOT143 Package PHOTO ENLARGEMENT DESCRIPTION The TC2211 is a high performance field effect transistor housed in a plastic package with TC1201 PHEMT Chip. Its low noise figure makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality.
Published: |