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MA4AGSW1A - AlGaAs SPST Non-Reflective PIN Diode Switch

Description

M/A-COM’s MA4AGSW1A is an Aluminum-Gallium Arsenide anode enhanced, SPST Non-Reflective PIN diode switch.

Features

  • Ultra Broad Bandwidth: 10 GHz to 50 GHz Functional Bandwidth: 100 MHz to 70 GHz 1.0 dB Insertion Loss, 35 dB Isolation at 50 GHz M/A-COM’s unique patent pending AlGaAs hetero-junction anode technology.
  • Silicon Nitride Passivation.
  • Polymide Scratch protection MA4AGSW1A Rev 2.0 MA4AGSW1A LAYOUT.

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Full PDF Text Transcription

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www.DataSheet4U.com AlGaAs SPST Non-Reflective PIN Diode Switch FEATURES • • • • Ultra Broad Bandwidth: 10 GHz to 50 GHz Functional Bandwidth: 100 MHz to 70 GHz 1.0 dB Insertion Loss, 35 dB Isolation at 50 GHz M/A-COM’s unique patent pending AlGaAs hetero-junction anode technology. • Silicon Nitride Passivation • Polymide Scratch protection MA4AGSW1A Rev 2.0 MA4AGSW1A LAYOUT DESCRIPTION M/A-COM’s MA4AGSW1A is an Aluminum-Gallium Arsenide anode enhanced, SPST Non-Reflective PIN diode switch. AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, produce less loss than conventional GaAs processes, by as much as a 0.3 dB reduction in insertion loss at 50 GHz.
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