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30N06 Datasheet, UMW

30N06 mosfet equivalent, 60v n-channel enhancement mode power mosfet.

30N06 Avg. rating / M : 1.0 rating-123

datasheet Download (Size : 1.19MB)

30N06 Datasheet
30N06
Avg. rating / M : 1.0 rating-123

datasheet Download (Size : 1.19MB)

30N06 Datasheet

Features and benefits

VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquire.

Application

Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excel.

Description

The 30N06 uses advanced trench technology and design to provide excellent RDS(ON) wi th low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced.

Image gallery

30N06 Page 1 30N06 Page 2 30N06 Page 3

TAGS

30N06
60V
N-Channel
Enhancement
Mode
Power
MOSFET
UMW

Manufacturer


UMW

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