30N06 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.05Ω ·Fast Switching Speed ·100% avalanche tested ·Minimum Lo

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MOSFET – N-Channel QFET 1000 V, 8 A, 1.45 W FQD30N06 Description This N−Channel Enhancement Mode Power MOSFET is produced using onsemi’s proprietary

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UNISONIC TECHNOLOGIES CO., LTD 30N06 60V, 30A N-CHANNEL POWER MOSFET  DESCRIPTION 1 TO-220F1 1 TO-220F2 1 TO-220 Power MOSFET 1 TO-220F The UTC 30

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AP30N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP30N06NF uses advanced trench technology to provide excellent RDS(ON), low gate charg

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STP30N06 STP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP30N06 STP30N06FI www.DataSheet4U.com s s s s s s s s V DSS 60 V 60 V R

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www.DataSheet4U.com UNISONIC TECHNOLOGIES CO., LTD 30N06 30 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 MOSFET DESCRIPTION The UTC 30N06 is a low volta

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UMW R UMW 30N06 60V N-Channel Enhancement Mode Power MOSFET UMW 30N06 General Description The 30N06 uses advanced trench technology and design to pr

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FQD30N06 / FQU30N06 FQD30N06 / FQU30N06 60V N-Channel MOSFET January 2009 QFET® General Description These N-Channel enhancement mode power field ef

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FQP30N06L — N-Channel QFET® MOSFET FQP30N06L N-Channel QFET® MOSFET 60 V, 32 A, 35 mΩ Description This N-Channel enhancement mode power MOSFET is pro

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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FQB30N06 / FQI30N06 May 2001 QFET FQB30N06 / FQI30N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect t

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FQPF30N06 May 2001 QFET FQPF30N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produ

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RFP30N06LE, RF1S30N06LESM Data Sheet April 1999 File Number 3629.2 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Ch

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VBZL30N06 N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.023 at VGS = 10 V 0.027 at VGS = 4.5 V ID (A)a, e

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FDP030N06 — N-Channel PowerTrench® MOSFET FDP030N06 N-Channel PowerTrench® MOSFET 60 V, 193 A, 3.2 mΩ November 2013 Features • RDS(on) = 2.6 mΩ (Ty

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FDMS030N06B — N-Channel PowerTrench® MOSFET FDMS030N06B N-Channel PowerTrench® MOSFET 60 V, 100 A, 3 mΩ November 2013 Features • RDS(on) = 2.4 mΩ

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www.DataSheet4U.com NTP30N06L, NTB30N06L Power MOSFET 30 Amps, 60 Volts, Logic Level N–Channel TO–220 and D2PAK Designed for low voltage, high speed

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RFP30N06LE, RF1S30N06LE, SEMICONDUCTOR RF1S30N06LESM July 1995 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power

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N N-CHANNEL IGBT R JT030N065WED/FED/SED MAIN CHARACTERISTICS Package IC VCES VCESAT-TYP 30 A 650V 1.75V  UPS  APPLICATIONS  General p

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