30N06 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.05Ω ·Fast Switching Speed ·100% avalanche tested ·Minimum Lo

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Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA130N065T2 IXTP130N065T2 VDSS = ID25 = RDS(

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IPD30N06S2-23 OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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www.DataSheet4U.com DFF30N06 N-Channel MOSFET Features ■ ■ ■ ■ ■ ■ Low RDS(on) (0.04Ω )@VGS=10V Low Gate Charge (Typical 27nC) Low Crss (Typical 75p

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AP30N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP30N06NF uses advanced trench technology to provide excellent RDS(ON), low gate charg

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isc N-Channel MOSFET Transistor IXTP130N065T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.6mΩ@VGS=10V ·Fully characterized avalanche v

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www.DataSheet4U.com UNISONIC TECHNOLOGIES CO., LTD 30N06 30 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 MOSFET DESCRIPTION The UTC 30N06 is a low volta

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www.DataSheet4U.com DFD30N06 N-Channel MOSFET Features ■ ■ ■ ■ ■ ■ Low RDS(on) (0.04Ω )@VGS=10V Low Gate Charge (Typical 27nC) Low Crss (Typical 75p

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HMS330N06, HMS330N06D N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely opti

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HRP130N06K HRP130N06K 60V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Char

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IPD30N06S2-15 OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°

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RFP30N06LE, RF1S30N06LESM Data Sheet April 1999 File Number 3629.2 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Ch

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Analog Power N-Channel 60-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applicat

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UNISONIC TECHNOLOGIES CO., LTD 30N06 60V, 30A N-CHANNEL POWER MOSFET  DESCRIPTION 1 TO-220F1 1 TO-220F2 1 TO-220 Power MOSFET 1 TO-220F The UTC 30

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UNISONIC TECHNOLOGIES CO., LTD 30N06-Q Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 30N06-Q is a low voltage power MOSFET and

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N N-CHANNEL IGBT R JT030N065WED/FED/SED MAIN CHARACTERISTICS Package IC VCES VCESAT-TYP 30 A 650V 1.75V  UPS  APPLICATIONS  General p

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