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2SB1260 - POWER TRANSISTOR

General Description

The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor.

Key Features

  • S.
  • High breakdown voltage and high current.
  • BVCEO= -80V, IC= -1A.
  • Good hFE linearity.
  • Low VCE(SAT).

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Full PDF Text Transcription for 2SB1260 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SB1260. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR  DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor.  FEATURES...

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2SB1260 is a epitaxial planar type PNP silicon transistor.  FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SB1260L-x-AA3-R 2SB1260G-x-AA3-R SOT-223 2SB1260L-x-AB3-R 2SB1260G-x-AB3-R SOT-89 2SB1260L-x-TN3-R 2SB1260G-x-TN3-R TO-252 Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 1 2 3 B C E B C E B C E Packing Tape Reel Tape Reel Tape Reel  MARKING Packing SOT-223 SOT-89 TO-252 www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd Marking 1 of 4 QW-R208-

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