2SB1260 - PNP Transistor

Key Features

High breakdown voltage and high current. BVCEO=-80V,IC=-1A.
Good hFEVLinearity.
Low VCE(sat).
Complements the 2SD1898. 2SB1260(PNP) Marking: ZL Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO -80 VCEO -80 VEBO -5 IC 1 PC 500 TJ 150 Tstg -55to +150 U.

2SB1260 pnp transistor by HOTTECH - Datasheet Preview

Datasheet Details

Part number	2SB1260
Manufacturer	HOTTECH
File Size	167.00 KB
Description	PNP Transistor
Datasheet	2SB1260 Datasheet

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Full PDF Text Transcription (Reference)

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Plastic-Encapsulate Transistors FEATURES • High breakdown voltage and high current. BVCEO=-80V,IC=-1A • Good hFEVLinearity. • Low VCE(sat). • Complements the 2SD1898. 2SB1260(PNP) Marking: ZL Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO -80 VCEO -80 VEBO -5 IC 1 PC 500 TJ 150 Tstg -55to +150 Unit V V V A mW 1. BASE 2. COLLECTO 3.