Complements to 2SD1767
2SB1189(PNP)
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-80
VCEO
-80
VEBO
-5
IC 0.7
PC 500
TJ 150
Tstg -55to +150
Unit
V V V A mW.
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Plastic-Encapsulate Transistors
FEATURES
• High breakdown voltage • Complements to 2SD1767
2SB1189(PNP)
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-80
VCEO
-80
VEBO
-5
IC 0.