2SB1386 - PNP Transistor

Key Features

Low collector saturation voltage,.
Execllent current-to-gain characteristics 2SB1386 (PNP) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO -30 VCEO -20 VEBO -6 IC -5 PC 0.5 TJ 150 Tstg -55to +150 Unit V V V A W.

2SB1386 pnp transistor by HOTTECH - Datasheet Preview

Datasheet Details

Part number	2SB1386
Manufacturer	HOTTECH
File Size	185.52 KB
Description	PNP Transistor
Datasheet	2SB1386 Datasheet

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Full PDF Text Transcription (Reference)

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Plastic-Encapsulate Transistors FEATURES • Low collector saturation voltage, • Execllent current-to-gain characteristics 2SB1386 (PNP) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO -30 VCEO -20 VEBO -6 IC -5 PC 0.