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CHA2194-99F - Low Noise Amplifier

General Description

The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint communication .

Key Features

  • Broad band performance 36-44GHz.
  • 3dB noise figure.
  • 19dB gain, ± 0.5dB gain flatness.
  • Low DC power consumption, 45mA.
  • 20dBm 3rd order intercept point.
  • Chip size : 1.670 x 1.030 x 0.1mm 28 25,00 26 24 22 20 18 15,00 16 14 12 10 8 5,00 6 4 2 0 -2 -5,00 -4 -6 -8 -10 -12 -15,00 -14 -16 -18 dBS21 NF dBS11 dBS22 -20 -22 -25,00 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 52 54 56 58 60 Frequency ( GHz ) On wafer typical measurement.

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Datasheet Details

Part number CHA2194-99F
Manufacturer United Monolithic Semiconductors
File Size 345.25 KB
Description Low Noise Amplifier
Datasheet download datasheet CHA2194-99F Datasheet

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Other Datasheets by United Monolithic Semiconductors

Part Number Description
CHA2194 36-44GHz Low Noise Amplifier
CHA2190 20-30GHz Low Noise Amplifier
CHA2190-99F Low Noise Amplifier
CHA2192 24-26.5GHz Low Noise Amplifier
CHA2193 20-30GHz Low Noise Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA2194-99F 36-44GHz Low Noise Amplifier Self biased GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint communication . The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main Features  Broad band performance 36-44GHz  3dB noise figure  19dB gain, ± 0.5dB gain flatness  Low DC power consumption, 45mA  20dBm 3rd order intercept point  Chip size : 1.670 x 1.030 x 0.